Saturday, 9 September 2017

Could UV Light Improve Semiconductor Integration?

Integrating different semiconductor materials into an epitaxial device structure offers additional degrees of freedom to select for optimal material properties in each layer. However, interfaces between materials with different valences (i.e. III-V, II-VI and IV semiconductors) can be difficult to form with high quality. 

Now, a discovery by Kwangwook Park and Kirstin Alberi, at the US Energy Department's National Renewable Energy Laboratory (NREL), suggests that careful application of UV illumination may be used to improve the optical properties of these material layers.

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